DocumentCode :
39613
Title :
Performance improved by point-contact electrodes and SiO2/SiNX layers at rear
Author :
Sheng-Shih Wang ; Jyh-Jier Ho ; Duo-Sheng Chen ; Jia-Show Ho ; Chen-Hsun Du ; Song-Yeu Tsai ; Hsien-Seng Hung ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung, Taiwan
Volume :
50
Issue :
23
fYear :
2014
fDate :
11 6 2014
Firstpage :
1736
Lastpage :
1738
Abstract :
The rear point-contact fabricated through the laser-opening technique for mass production was applied on the photovoltaic cells. Laser opening, different layers for passivation (SiO2) and protection (SiNX) were employed to investigate their impact on the performances of solar cells. The SiNX layer protects the SiO2 layer from being burnt through by aluminium paste at the co-firing step. A conversion efficiency (η) of 16.91% with an open-circuit voltage of 628 mV was obtained for the optimal cell, a stack structure with SiO2 and SiNX layers, which also achieves a lower contact resistance of 6.66 mΩ·cm2 and a higher light-beam-induced current of 80.77 mA/cm2. The optimal cell also showed longer lifetime and 3-4% increased quantum efficiency in the visible wavelength range. Therefore, the developed process has simplicity and reliability, is fast and cost-effective and could be applied to industrial applications.
Keywords :
OBIC; contact resistance; electrodes; mass production; passivation; quantum point contacts; silicon compounds; solar cells; LBIC; SiO2-SiNx; co-firing; contact resistance; conversion efficiency; laser opening technique; light beam induced current; mass production; passivation layer protection; photovoltaic cells; point contact electrodes; quantum efficiency; rear point contact fabrication; reliability; solar cells; voltage 628 mV;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.1084
Filename :
6954802
Link To Document :
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