DocumentCode
39615
Title
Single Photon Avalanche Diode Collection Efficiency Enhancement via Peripheral Well-Controlled Field
Author
Savuskan, Vitali ; Gal, Lior ; Cristea, David ; Javitt, Michael ; Feiningstein, Amos ; Leitner, Tomer ; Nemirovsky, Yael
Author_Institution
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume
62
Issue
6
fYear
2015
fDate
Jun-15
Firstpage
1939
Lastpage
1945
Abstract
Single-photon avalanche diodes photon detection efficiency (PDE) and breakdown uniformity are studied. An approach to increase the PDE based on controlled breakdown of the peripheral region of the junction is described. Parameters influencing and controlling the peripheral region breakdown are discussed. A collection efficiency >60% is demonstrated, nearly twice that of a conventional, planar breakdown device.
Keywords
avalanche diodes; semiconductor device breakdown; breakdown uniformity; peripheral region breakdown; peripheral well-controlled field; photon detection efficiency; planar breakdown device; single photon avalanche diode collection; CMOS integrated circuits; Charge carriers; Doping; Electric breakdown; Junctions; Photonics; Tunneling; Avalanche breakdown; CMOS single-photon avalanche diode (SPAD); image sensors; photodiodes; photodiodes.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2421500
Filename
7093159
Link To Document