Title :
Challenges and opportunities for InP HBT mixed signal circuit technology
Author_Institution :
DARPA/MTO, Arlington, VA, USA
Abstract :
Mixed signal circuits based on InP HBTs are being challenged for meeting DoD high bandwidth and dynamic range requirements by aggressively scaled SiGe bipolar technology. This paper presents the challenges that conventional mesa InP HBT technology must overcome (primarily scaling and integration complexity) to maintain its competitive advantage over the silicon alternative. Approaches to overcoming these challenges are identified.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; mixed analogue-digital integrated circuits; DoD dynamic range requirements; DoD high bandwidth requirements; InP; InP HBT mixed signal circuit technology; aggressively scaled SiGe bipolar technology; integration complexity; scaling; Bandwidth; Circuits; Double heterojunction bipolar transistors; Dynamic range; Flip-flops; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Parasitic capacitance; Silicon germanium;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205300
