Title :
High indium content metamorphic (In,Al)As/(In,Ga)As heterojunction bipolar transistors
Author :
Monier, C. ; Sawdai, D. ; Cavus, Abdullah ; Sandhu, R. ; Lange, M. ; Wang, J. ; Yamamoto, J. ; Hsing, R. ; Hayashi, S. ; Noori, A. ; Block, T. ; Goorsky, M.S. ; Gutieffez-Aitken, A.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA, USA
Abstract :
InxAl1-xAs/InxGa1-xAs heterojunction bipolar transistors (HBTs) with indium composition ranging from 86 to 100% were grown on InP substrates using strain-relief compositionally graded InxAl1-xAs buffers. Lattice-matched In0.86Al0.14As/In0.86Ga0.14As single and double HBTs with large and small emitter active areas have been successfully fabricated on 6.00 Å graded buffer layers. Despite the use of narrow band gap material system, practical breakdown voltages exceeding 1.5 V have been demonstrated from DHBT structures with high DC gain, reduced leakage at the device junctions and turn-on voltage reduction by a factor of two compared to existing InP bipolar technology.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; narrow band gap semiconductors; semiconductor device breakdown; semiconductor growth; 1.5 V; 6.00 Å; In0.86Al0.14As-In0.86Ga0.14As; In0.86Al0.14As/In0.86Ga0.14As; InP substrates; device junctions; metamorphic (In,Al)As/(In,Ga)As heterojunction bipolar transistors; narrow band gap material system; practical breakdown voltages; reduced leakage; strain-relief compositionally graded InxAl1-xAs buffers; turn-on voltage reduction; Buffer layers; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photonic band gap; Substrates; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205305
