Title :
Modulation dynamics of amplified spontaneous emission in saturated GaInAsP/InP semiconductor optical amplifiers
Author :
Yamatoya, T. ; Koyama, E.
Author_Institution :
Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We investigate modulation dynamics of amplified spontaneous emission (ASE) of saturated semiconductor optical amplifiers (SOAs) with various device lengths. We measured the optical intensity modulation of ASE of GaInAsP/InP SOAs. In a long SOA, a large input-signal-wavelength dependence of the ASE response was observed, which was relaxed in a large-signal measurement in comparison with a small-signal measurement. Faster responses in ASE were obtained under higher bias current density and in longer SOAs even with the same injection current density. We demonstrated a high speed response beyond 20 GHz with an long SOA. In addition, we demonstrated 10 Gbit/s operation of the optical preamplifier using inverted ASE signal of a saturated SOA with a receiver sensitivity of -22.7 dBm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fibre amplifiers; optical modulation; superradiance; 20 GHz; GaInAsP-InP; SOAs; amplified spontaneous emission; high speed response; modulation dynamics; optical intensity modulation; saturated GaInAsP/InP semiconductor optical amplifiers; Current density; Gain measurement; High speed optical techniques; Indium phosphide; Optical receivers; Optical saturation; Optical sensors; Semiconductor optical amplifiers; Spontaneous emission; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205347
