DocumentCode :
396277
Title :
Comparative analysis of 1.3-μm InGaAs quantum dots and InGaAsN quantum well lasers
Author :
Egorov, A.Yu. ; Ustinov, V.M.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear :
2003
fDate :
12-16 May 2003
Firstpage :
261
Lastpage :
262
Abstract :
The characteristics of edge emitting InGaAsN QW and InAs/InGaAs QD lasers are comparatively discussed and correlated to the specific properties of the active region.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; quantum well lasers; semiconductor device measurement; semiconductor quantum dots; semiconductor quantum wells; 1.3 micron; InGaAs; InGaAs quantum dots; InGaAsN; InGaAsN quantum well lasers; active region; Indium gallium arsenide; Optical losses; Optical materials; Quantum dot lasers; Quantum well lasers; Semiconductor materials; Surface emitting lasers; Threshold current; US Department of Transportation; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
Type :
conf
DOI :
10.1109/ICIPRM.2003.1205365
Filename :
1205365
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=396277
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