Ultrafast recovery times and increased absorption nonlinearity in InGaAsP MQW saturable absorbers implanted at 200°C

Author

Pantouvaki, M. ; Gwilliam, R. ; Burr, E.P. ; Krysa, A.B. ; Roberts, J.S. ; Seeds, A.J.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

fYear

2003

fDate

12-16 May 2003

Firstpage

355

Lastpage

358

Abstract

Implantation of an InGaAsP MQW structure with 4 MeV N-ions at room temperature and at 200°C results in absorption recovery times < 10 ps. High-temperature implantation improves the post-implantation absorption modulation by up to 20%, due to dynamic annealing. This makes implantation at high temperature an interesting technique for the fabrication of ultrafast non-linear optical devices.

Keywords

III-V semiconductors; annealing; gallium arsenide; high-speed optical techniques; indium compounds; ion implantation; optical saturable absorption; semiconductor quantum wells; 10 ps; 200 degC; 4 MeV; InGaAsP MQW saturable absorbers; InGaAsP:N; N ion implantation; absorption recovery times; dynamic annealing; high temperature; high-temperature implantation; increased absorption nonlinearity; post-implantation absorption modulation; room temperature; ultrafast nonlinear optical devices; ultrafast recovery times; Absorption; Annealing; Distributed Bragg reflectors; Indium phosphide; Nonlinear optics; Plasma temperature; Quantum well devices; Substrates; Synthetic aperture sonar; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205388

Filename

1205388