Title :
Growth and device performance of InP/GaAsSb HBTs
Author :
Chung, S.J. ; Rohdin, H. ; Moll, N. ; Amano, J.
Abstract :
We report the growth of high-quality InP/GaAsSb heterojunction bipolar transistors (HBTs) for high-frequency applications by metalorganic vapor phase epitaxy (MOVPE) and gas-source molecular beam epitaxy (GSMBE) using carbon as a base dopant. Hole concentrations above 1020 cm-3 are achieved in a carbon-doped GaAsSb base layer. We measure type I and type II luminescence from InP/GaAsSb/InAlAs and GaAsSb/InP superlattices to evaluate quickly the HBT´s GaAsSb base layer and collector-base and base-emitter heterojunction quality. The HBTs exhibit excellent DC characteristics and a current gain cutoff frequency over 210 GHz.
Keywords :
III-V semiconductors; MOCVD coatings; carbon; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; hole density; indium compounds; photoluminescence; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; 210 GHz; InP-GaAsSb:C; InP/GaAsSb:C HBTs; MOVPE; base dopant; base-emitter heterojunction quality; collector-base heterojunction quality; current gain cutoff frequency; device performance; gas-source molecular beam epitaxy; growth; heterojunction bipolar transistors; hole concentrations; metalorganic vapor phase epitaxy; Doping; Epitaxial growth; Epitaxial layers; Heterojunction bipolar transistors; Indium phosphide; Inductors; Luminescence; Molecular beam epitaxial growth; Superlattices; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205395
