Production of next generation InP-HBT epiwafers by MBE

Author

Lubyshev, D.I. ; Malis, O. ; Teker, K. ; Wu, Y. ; Fastenau, J.M. ; Fang, X.-M. ; Doss, C. ; Cornfeld, A.B. ; Liu, W.K.

Author_Institution

IQE Inc., Bethlehem, PA, USA

fYear

2003

fDate

12-16 May 2003

Firstpage

385

Lastpage

388

Abstract

The current status of InP-based HBT epiwafer production using multi-wafer MBE systems at IQE Inc. is presented. Control and stability of critical material growth parameters demonstrate reproducible quality of standard InP/InGaAs/InAlAs HBT structures grown on 4-inch diameter substrates. Experimental data from HBTs grown on newly developed 6-inch substrates exhibit good material and device parameters. Development of next-generation structures, including GaAsSb-base and metamorphic HBTs, is also discussed.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 4 inch; 4-inch diameter substrates; 6 inch; 6-inch substrates; InP-InGaAs-InAlAs; MBE; control; next generation InP-HBT epiwafers; stability; standard InP/InGaAs/InAlAs HBT structures; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Inductors; Molecular beam epitaxial growth; Optical materials; Production; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205396

Filename

1205396