Selective area growth of InP through narrow openings by MOCVD and its application to InP HBT

Author

Dong, Yingda ; Okuno, Yae L. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2003

fDate

12-16 May 2003

Firstpage

389

Lastpage

392

Abstract

Selective growth behavior of InP through narrow openings (<2 μm) by metal-organic chemical vapor deposition (MOCVD) was investigated. The lateral overgrowth was observed to be significantly affected by both the opening width and orientation. The lateral overgrowth showed a ´diffraction-like´ behavior, with the lateral overgrowth length increasing with decreasing opening width. The application of InP lateral overgrowth to InP/InGaAs heterojunction bipolar transistor (HBT) is proposed and the device behaviors of the HBT prototypes with the extrinsic base laterally overgrown on buried SiO₂ are demonstrated.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor growth; HBT; InP-InGaAs; MOCVD; SiO₂; device behavior; lateral overgrowth; selective area growth; Application software; Capacitance; Chemical vapor deposition; Etching; Gases; Heterojunction bipolar transistors; Indium phosphide; MOCVD; Optical device fabrication; Prototypes;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205397

Filename

1205397