Title :
Optical properties of the quantum dot structures self-formed in GaAs/InAs short-period superlattices grown on InP(411)A substrates
Author :
Mori, J. ; Nakano, T. ; Hasegawa, Shun ; Asahi, H.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
High lateral density (∼1011 cm-2) quantum dot (QD) structures are self-formed by growing the (GaAs)2(InAs)n short period superlattices (SLs) on InP (411)A substrates by gas source MBE. QD structures are well-aligned along two perpendicular directions. Multi-layer quantum dot structures sandwiched with InP barrier layers showed a strong photoluminescence (PL) emission. The PL wavelength of 1.3-1.6 μm was easily obtained by controlling the SL period as well as the InAs monolayer number (layer thickness). We also fabricated light emitting diodes (LEDs) and observed current-injection light emission.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; electroluminescence; gallium arsenide; indium compounds; light emitting diodes; photoluminescence; semiconductor growth; semiconductor quantum dots; semiconductor superlattices; (GaAs)2(InAs)n short period superlattices; 1.3 to 1.6 micron; GaAs-InAs; GaAs/InAs short-period superlattices; InAs monolayer number; InP; InP barrier layers; InP(411)A substrates; current-injection light emission; gas source MBE; high lateral density quantum dot structures; layer thickness; light emitting diodes; multi layer quantum dot structures; optical properties; perpendicular directions; self-formed quantum dot structures; strong photoluminescence emission; superlattice period; well-aligned QD structures; Gallium arsenide; Indium phosphide; Laser sintering; Light emitting diodes; Molecular beam epitaxial growth; Optical superlattices; Quantum dots; Substrates; Temperature; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205417
