Title :
1.55 μm traveling-wave amplification photodetector
Author :
Piprek, J. ; Pasquariello, D. ; Lasaosa, D. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We demonstrate a novel InP-based ridge-waveguide photodetector with monolithically integrated multiple-quantum well amplification layers. Performance limitations are analyzed using advanced device simulation and design optimizations are proposed.
Keywords :
III-V semiconductors; indium compounds; infrared detectors; integrated optoelectronics; photodetectors; quantum well lasers; ridge waveguides; InP; InP-based ridge-waveguide photodetector; advanced device simulation; design optimizations; monolithically integrated multiple-quantum well amplification layers; n-p-n structure; performance limitations; traveling-wave amplification photodetector; waveguide n-i-p amplifier; waveguide p-i-n detector; Analytical models; Detectors; Optical amplifiers; Optical fiber devices; Optical saturation; Optical waveguides; Photoconductivity; Photodetectors; Quantum well devices; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205425
