Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL

Author

Bosi, M. ; Fornari, R. ; Scardova, S. ; Avella, M. ; Martinez, Oscar ; Jimenez, J.

Author_Institution

CNR-IMEM Inst., Parma, Italy

fYear

2003

fDate

12-16 May 2003

Firstpage

538

Lastpage

541

Abstract

InGaN samples grown by MOVPE were investigated by micro-Raman spectroscopy, photoluminescence and spectrally-resolved cathodo-luminescence. These methods allowed the precise determination of the Indium distribution at the micro and macro scale. The In molar fraction in the films tends to increase from centre to edge of the 2" wafers. We also noted that for increasing In content, some additional modes are seen in the Raman spectra. They are tentatively associated with the In clustering phenomena, further justified by CL spectral maps.

Keywords

III-V semiconductors; Raman spectra; cathodoluminescence; gallium compounds; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor heterojunctions; wide band gap semiconductors; 2 in; CL spectral maps; GaN-InGaN; GaN/InGaN heterostructures; In clustering phenomena; In content; In distribution; In molar fraction; MOVPE; PL band-band peak; Raman spectra; characterization; micro-Raman spectroscopy; photoluminescence; spectrally-resolved cathodoluminescence; Acceleration; Accelerometers; Current measurement; Gallium nitride; Luminescence; Nitrogen; Raman scattering; Spectroscopy; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205435

Filename

1205435