InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy

Author

Tsuchiya, T. ; Shimizu, J. ; Shirai, M. ; Aoki, M.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

546

Lastpage

549

Abstract

In the case of InGaAlAs selective-area growth (SAG), when the aluminum content is high (Al: 0.48), flatness at the mask edge degrades and compositional change in the selective region increases. On the other hand, when the aluminum content is low (Al: 0.16), a flat growth plane is formed and no spike growth at the mask edge appears. Moreover, for a multiple-quantum-well structure, the PL peak intensity in the selective region is similar to that in the non-selective region.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAlAs; InGaAlAs selective-area growth; InP; InP substrate; PL peak intensity; aluminum content; compositional change; flat growth plane; mask edge; metalorganic vapor phase epitaxy; multiple-quantum-well structure; Aluminum; Conducting materials; Degradation; Epitaxial growth; Indium phosphide; Optical materials; Quantum well devices; Semiconductor lasers; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205438

Filename

1205438