DocumentCode
396351
Title
Design of a 4.4 to 5 GHz LNA in 0.25-μm SiGe BiCMOS technology
Author
Crippa, Paolo ; Orcioni, Simone ; Ricciardi, Francesco ; Turchetti, Claudio
Author_Institution
Dipt. di Elettronica ed Automatica, Universita Politecnica delle Marche, Ancona, Italy
Volume
1
fYear
2003
fDate
25-28 May 2003
Abstract
This paper describes a low-noise amplifier (LNA), designed using a 0.25 μm SiGe process, operating in the 4.45 GHz band. A power gain of 12.8 dB at 5 GHz has been achieved with a power consumption of 23.77 mW using a 2 V power supply. The noise figure is 2.2 dB while the input referred 1 dB compression point is -6.2 dBm.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; circuit simulation; integrated circuit design; integrated circuit noise; semiconductor materials; 0.25 micron; 12.8 dB; 2 V; 2.2 dB; 23.77 mW; 4.4 to 5 GHz; 4.45 GHz; 5 GHz; LNA power consumption; SiGe; SiGe BiCMOS LNA; amplifier power gain; input referred compression point; low-noise amplifier; noise figure; BiCMOS integrated circuits; Breakdown voltage; Capacitors; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Inductors; Linearity; Noise figure; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN
0-7803-7761-3
Type
conf
DOI
10.1109/ISCAS.2003.1205568
Filename
1205568
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