Title :
1-GS/s, 12-bit SiGe BiCMOS D/A converter for high-speed DDFs
Author :
Baek, Kwang-Hyun ; Choe, Myung-Jun ; Merlo, Edward ; Kang, Sung-MO
Author_Institution :
Rockwell Sci. Co., Thousand Oaks, CA, USA
Abstract :
This paper presents a 1-GS/s, 12-bit SiGe BiCMOS D/A converter combined with high-speed low-spurious BiCMOS current switches and an efficient calibration method for current mismatch. Experimental results show a reduction in INL and DNL errors from +35.5/-62.2 LSB to +4.1/-3.4 LSB and from +8.1/-10.3 LSB to +6.2/-1.2 LSB, respectively, after calibration. SFDR performance is 72.3 dBc at output frequency of 1.82 MHz and 50.0 dBc at output frequency of 334.39 MHz, when the sampling clock frequency is 1 GHz. Power consumption is about 950 mW at 100.48MHz output frequency and -3.3 V power supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; calibration; digital-analogue conversion; direct digital synthesis; high-speed integrated circuits; semiconductor materials; -3.3 V; 1 GHz; 1.82 MHz; 100.48 MHz; 12 bit; 334.39 MHz; 950 mW; SiGe; SiGe BiCMOS D/A converter; calibration method; current mismatch; direct digital frequency synthesizer; high-speed current switch; BiCMOS integrated circuits; Calibration; Clocks; Energy consumption; Frequency; Germanium silicon alloys; Sampling methods; Silicon germanium; Switches; Switching converters;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1205710
