Title :
An 82 dB CMOS continuous-time complex bandpass sigma-delta ADC for GSM/EDGE
Author :
Esahani, F. ; Basedau, Philipp ; Ryter, Roland ; Becker, Rolf
Author_Institution :
Philips Semicond. AG, Zurich, Switzerland
Abstract :
A low-power complex fourth order continuous-time ΣΔ ADC for GSM and EDGE applications has been designed and fabricated in a 0.25 μm CMOS technology. This ADC has a bandwidth of 270 kHz centered around -100 kHz. The achieved dynamic range (DNR) is 82 dB at a sampling rate of 13 MHz. The power consumption is 4.6 mW at 2 V supply. To our knowledge this is the best performance, which has been reported so far for a complex ΣΔ ADC for GSM/EDGE receivers in CMOS technology working in low-IF (LIF) mode.
Keywords :
CMOS integrated circuits; cellular radio; continuous time systems; low-power electronics; radio receivers; sigma-delta modulation; -100 kHz; 0.25 micron; 13 MHz; 2 V; 270 kHz; 4.6 mW; CMOS continuous-time complex bandpass sigma-delta ADC; EDGE; GSM; dynamic range; low-IF receiver; low-power operation; Band pass filters; Bandwidth; CMOS technology; Delta-sigma modulation; Dynamic range; Energy consumption; Frequency; GSM; Sampling methods; Transfer functions;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1205747
