DocumentCode :
39665
Title :
High TMR Ratio in 
and 
Based Magnetic Tunn
Author :
Sterwerf, C. ; Meinert, M. ; Schmalhorst, J.-M. ; Reiss, Guenter
Author_Institution :
Dept. of Phys., Bielefeld Univ., Bielefeld, Germany
Volume :
49
Issue :
7
fYear :
2013
fDate :
Jul-13
Firstpage :
4386
Lastpage :
4389
Abstract :
Magnetic tunnel junctions with Fe1+zCo2-xSi (0 ≤ x ≤ 1)electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262% at 15 K and 159% at room temperature were observed for x = 0.75. Correlations of the annealing temperature dependent atomic ordering and TMR amplitude are discussed. The high TMR for an intermediate stoichiometry is ascribed to the adjustment of the Fermi energy within a minority spin pseudo gap.
Keywords :
Fermi level; cobalt alloys; ferromagnetic materials; iron alloys; magnetic annealing; magnetic thin films; magnetic tunnelling; silicon alloys; sputter deposition; stoichiometry; tunnelling magnetoresistance; Fe1+zCo2-xSi; Fermi energy; MgO; MgO substrates; TMR; annealing; electrodes; magnetic tunnel junctions; magnetron cosputtering; minority spin pseudogap; stoichiometry; temperature 15 K; temperature 293 K to 298 K; tunnel magnetoresistance; Annealing; Compounds; Junctions; Magnetic tunneling; Metals; Temperature measurement; Tunneling magnetoresistance; Half-metals; Heusler compounds; TMR; X-ray diffraction; magnetic films; magnetoresistance; thin films;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2013.2238220
Filename :
6559054
Link To Document :
