Anomalous resistance effect of Si containing deep impurities and its application to micro-sensor

Author

Li, Xing ; Liang, Jia-chang ; Li, Ming

Author_Institution

Dept. of Electron. Eng., Tianjin Univ., China

Volume

1

fYear

2003

fDate

4-7 May 2003

Firstpage

39

Abstract

The resistance effect of semiconductors containing shallow impurities obeys T^-32/ rule. However, for the single crystal n-type silicon containing deep acceptor impurities, the variation of resistance with temperature mainly depends on an exponential term exp[- (E_F - E_A/kT]. This anomalous resistance effect can increase the temperature sensitivity by 1,000 times. Its application to the micro-flow-sensor not only increases the sensitivity, but also reduces its time constant greatly.

Keywords

electric resistance; elemental semiconductors; gold; impurity states; microsensors; silicon; Si:Au; anomalous resistance effect; deep acceptor impurities; deep impurities; microflow-sensor; resistance variations; semiconductors; single crystal n-type silicon; temperature sensitivity; time constant; wheatstone bridge; Application software; Bridge circuits; Gold; Photonic band gap; Power measurement; Resistors; Semiconductor impurities; Silicon; Temperature sensors; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2003. IEEE CCECE 2003. Canadian Conference on

ISSN

0840-7789

Print_ISBN

0-7803-7781-8

Type

conf

DOI

10.1109/CCECE.2003.1226339

Filename

1226339