OCD evaluation for trench depth/CD monitor in Cu/low-k dual damascene fabrication

Author

Li, Huaqing ; Yang, Songping ; Jun, Kyungho ; Luo, Lei ; Armacost, M. ; Yost, D.

Author_Institution

Appl. Mater. Inc., Santa Clara, CA, USA

fYear

2003

fDate

30 Sept.-2 Oct. 2003

Firstpage

157

Lastpage

160

Abstract

Optical Critical Dimension (OCD) metrology provides rapid online CD (trench depth, line width and profile) measurements enabling improved etch control. The methodology of OCD is explained and typical results shown. The results showed that OCD measurements have good agreement with other metrologies such as cross-sectional SEM, AFM and CD-SEM and the electrical results on the finished device. A DOE was run and models for both etch rate and within wafer etch uniformity were built. These models can be used for wafer-to-wafer (WTW) and within wafer (WIW) trench etch uniformity controls.

Keywords

atomic force microscopy; copper; dielectric materials; dielectric thin films; diffractive optical elements; electric resistance; etching; integrated circuit interconnections; integrated circuit manufacture; process control; scanning electron microscopy; size measurement; AFM; CD-SEM; Cu; Cu/low-k dual damascene fabrication; DOE; cross-sectional SEM; optical critical dimension metrology; trench depth/CD monitor; wafer etch uniformity; Copper; Dielectric measurements; Etching; Fabrication; Gratings; Metrology; Monitoring; Optical feedback; Optical films; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2003 IEEE International Symposium on

ISSN

1523-553X

Print_ISBN

0-7803-7894-6

Type

conf

DOI

10.1109/ISSM.2003.1243254

Filename

1243254