• DocumentCode
    397461
  • Title

    Megasonic free single wafer ozone jet cleans: concept and feasibility

  • Author

    Jungyup Kim ; Yongbae Kim

  • Author_Institution
    Novo Res. Inc., San Jose, CA, USA
  • fYear
    2003
  • fDate
    30 Sept.-2 Oct. 2003
  • Firstpage
    233
  • Lastpage
    236
  • Abstract
    A newly developed single wafer ozone cleaning process shows high particle removal performance without the use of megasonics. The process utilizes gaseous ozone stream with diluted HF and NH4OH chemicals to remove wafer particles at room temperature. This new single wafer cleaning process utilizes the strong oxidative properties of ozone with the zeta potential advantages of NH4OH for particle removal. There are significant cost advantages when compared to a conventional batch type cleaning process. The process can be applied to FEOL and BEOL cleans including post-CMP clean.
  • Keywords
    electrokinetic effects; elemental semiconductors; integrated circuit manufacture; silicon; surface cleaning; 293 K; BEOL cleaning; FEOL cleaning; HF chemical; NH4OH chemical; Si; gaseous ozone stream; megasonic free single wafer ozone jet cleaning; oxidative properties; room temperature; wafer cleaning; zeta potential; Chemical processes; Chemical technology; Costs; Hafnium; Hardware; Orifices; Oxidation; Surface cleaning; Surface treatment; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2003 IEEE International Symposium on
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7894-6
  • Type

    conf

  • DOI
    10.1109/ISSM.2003.1243272
  • Filename
    1243272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=397461