Title :
Gap-fill performance and film properties of PMD films for the 65 nm device technology
Author :
Lim, Michele ; Papasouliotis, G.D. ; Kinder, R. ; Bayman, Atiye
Author_Institution :
Novellus Syst. Inc., San Jose, CA, USA
fDate :
30 Sept.-2 Oct. 2003
Abstract :
A novel high density plasma (HDP) CVD process developed for premetal dielectric applications is presented. The process facilitates void-free gap-fill in high aspect ratio structures, thus addressing one of the main challenges facing premetal dielectric (PMD) technology as device dimensions shrink in the 90 nm and 65 nm technology nodes. The effects of carrier gas composition and plasma characteristics on gap-fill performance are discussed in view of the mechanism of oxide HDP deposition. Optimization results and examples of successful implementation of the process are shown. Results are presented on the properties and composition of both phosphorus-doped and undoped silicon oxide films, which are tightly controlled within a wide temperature range.
Keywords :
dielectric materials; dielectric thin films; phosphorus; plasma CVD; silicon compounds; 65 nm; 90 nm; PMD films; SiO2; SiO2:P; carrier gas composition; dielectric applications; doping; film properties; gap fill performance; high density plasma CVD process; phosphorus; plasma characteristics; premetal dielectric technology; silicon oxide films; void free gap fill; Dielectric devices; Plasma applications; Plasma density; Plasma devices; Plasma properties; Plasma temperature; Semiconductor films; Silicon; Temperature control; Temperature distribution;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243320
