• DocumentCode
    397469
  • Title

    In-house reclaim of test wafers

  • Author

    Moser, R. ; Priest, Judy

  • Author_Institution
    Texas Instruments Inc., Dallas, TX, USA
  • fYear
    2003
  • fDate
    30 Sept.-2 Oct. 2003
  • Firstpage
    451
  • Lastpage
    453
  • Abstract
    Semiconductor pilot wafer reclaim done in-house can represent a huge potential savings for any manufacturer. Historically, however, it is outsourced at 200 mm, either due to costs or fab floor space limitations that can otherwise be used for production increases. Now that 300 mm wafer processing is no longer in it´s infancy, the issue of in-house pilot wafer reclaim must be revisited. Criteria for success of this operation are two-fold: pilot wafers re-used in the fab must be free of film and have few particles, and there must be a significant cost savings to the fab by doing so. Outsourcing this task is not only expensive, but the large amount of silicon removed in the process gives these test wafers a short lifetime and raises the cost. Texas Instruments and Applied Materials have developed a polish process for Pilot Wafer Reclaim. This polishing process removes less than 3% of the silicon removed by third party vendors, dramatically extending pilot wafer lifetime, shortens the inventory turn-around time and significantly reducing the fab´s silicon costs, which are still several times that of 200 mm. This paper will present a methodology to effectively recycle blanket pilot wafers using a two-fold approach: film strip followed by polish.
  • Keywords
    chemical mechanical polishing; elemental semiconductors; integrated circuit manufacture; integrated circuit testing; recycling; silicon; 200 mm; 300 mm; Si; blanket pilot wafers; fab floor space limitation; film strip; pilot wafer lifetime; polish process; semiconductor pilot wafer reclaim; silicon; test wafers; third party vendors; two-fold approach; wafer processing; Costs; Instruments; Life testing; Outsourcing; Production; Recycling; Semiconductor device manufacture; Silicon; Strips; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2003 IEEE International Symposium on
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7894-6
  • Type

    conf

  • DOI
    10.1109/ISSM.2003.1243324
  • Filename
    1243324