Title :
Optical and electrical characterisation of an p+-InAs0.96Sb0.04/n0-InAs0.96Sb0.04/n+-In As photodetector for mid-infrared application
Author :
Chakrabarti, P. ; Krier, A. ; Huang, X.L. ; Fenge, P. ; Lal, R.K.
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Abstract :
An InAsSb p+-n junction photodetector grown on InAs substrate by liquid phase epitaxy has been modeled and characterized. The results obtained on the basis of the model are compared and contrasted with experimentally measured values. Both electrical and optical characterisation of the device has been carried out for exploring the application potential of the device in an absorption spectroscopy based gas sensors. The model enables one to explain the various mechanisms that shape the characteristics of the device under actual operating condition. It can also be used as a tool for optimizing the detector.
Keywords :
III-V semiconductors; gas sensors; indium compounds; infrared detectors; infrared spectroscopy; liquid phase epitaxial growth; photodetectors; semiconductor device models; InAsSb-InAs; MIR photodetector; absorption spectroscopy; gas sensors; liquid phase epitaxy; mid-infrared photodetector; pn junction photodetector; Electromagnetic wave absorption; Epitaxial growth; Infrared detectors; Optical sensors; Photoconducting materials; Photodetectors; Semiconductor materials; Semiconductor process modeling; Substrates; Tunneling;
Conference_Titel :
Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International
Print_ISBN :
0-7803-7824-5
DOI :
10.1109/IMOC.2003.1244836
