Title :
InAs quantum dot DFB lasers on GaAs for uncooled 1310 nm fiber communication
Author :
Zhang, L. ; Wang, R. ; Zou, Z. ; Gray, A. ; Olona, L. ; Newell, T. ; Webb, D. ; Varangis, P. ; Lester, L.
Author_Institution :
Zia Laser Inc., Albuquerque, NM, USA
Abstract :
We have reported the temperature and high-speed performance for DWELL FP and DFB lasers at wavelengths near 1310 nm. The positive gain-offset clearly improves the temperature performance of the QD DFB lasers, resulting in a constant threshold current and slope efficiency in the temperature range from 10 to 50°C. A threshold current as low as 10.5 mA with a 3 mW output power at 100°m and 9 GHz 3-dB bandwidth at room temperature were obtained. By utilizing the p-doped active region, which improves both T0 and the bandwidth, low-threshold temperature-independent QD FP and DFB lasers with 3-dB modulation bandwidth well above 10 GHz can be expected in the near future for 1310 nm uncooled applications.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical fibre communication; optical transmitters; quantum dot lasers; quantum well lasers; 10 to 50 C; 10.5 mA; 100 C; 1310 nm; 293 to 298 K; 3 mW; 9 GHz; InAs quantum dot DFB lasers; InAs-GaAs; QD DFB constant threshold current; dots-in-a-well structure Fabry Perot laser high-speed performance; laser output power; low-threshold temperature-independent QD FP; modulation bandwidth; p-doped active region; positive gain-offset; room temperature; slope efficiency; uncooled fiber communication; Fiber lasers; Gallium arsenide; Optical fiber communication; Optical transmitters; Optical waveguides; Quantum dot lasers; Quantum well lasers; Temperature measurement; US Department of Transportation; Waveguide lasers;
Conference_Titel :
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN :
1-55752-746-6
DOI :
10.1109/OFC.2003.1248491