DocumentCode :
39953
Title :
Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells With a ZnTe:Cu Back Contact
Author :
Li, Jian V. ; Duenow, Joel N. ; Kuciauskas, Darius ; Kanevce, Ana ; Dhere, R.G. ; Young, Matthew R. ; Levi, Dean H.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Volume :
3
Issue :
3
fYear :
2013
fDate :
Jul-13
Firstpage :
1095
Lastpage :
1099
Abstract :
We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration, while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at ~0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially improves with Cu concentration then decreases, reflects the interplay between the positive influences (reducing the back-contact potential barrier while increasing the saturation current density of the back contact and hole density in CdTe bulk) and negative influences (increasing deep levels in CdTe) of Cu.
Keywords :
II-VI semiconductors; cadmium compounds; copper; current density; deep levels; doping profiles; electrical conductivity; electrical contacts; hole density; semiconductor doping; semiconductor thin films; solar cells; wide band gap semiconductors; zinc compounds; CdS-CdTe-ZnTe:Cu; back-contact potential barrier; copper concentration; deep level; electrical property; hole density; saturation current density; thin-film solar cells; Admittance measurement; CdTe; capacitance–voltage (CV) characteristics; charge carrier density; contacts; defect;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2257919
Filename :
6509932
Link To Document :
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