Title :
808 nm high power laser diodes based on MOCVD grown AlGaAs/GaAs broad waveguide heterostructures
Author :
Marmalyuk, A.A. ; Padalitsa, A.A. ; Nikitin, D.B. ; Bulaev, P.V. ; Sukharev, A.V. ; Zalevsky, I.D.
Author_Institution :
Sigm Plus Co., Moscow, Russia
Abstract :
This paper reports the development of the separate confinement broad waveguide AlGaAs/GaAs heterostructures grown by low pressure metal organic chemical vapor deposition (LP MOCVD) for high power laser diodes operated at 808 nm.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; laser transitions; semiconductor growth; semiconductor heterojunctions; semiconductor lasers; waveguide lasers; 808 nm; AlGaAs-GaAs; AlGaAs/GaAs broad waveguide heterostructures; MOCVD; high power laser diodes; low pressure metal organic chemical vapor deposition; Chemical vapor deposition; Diode lasers; Gallium arsenide; Inductors; Laser excitation; MOCVD; Mirrors; Organic chemicals; Power generation; Solid lasers;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on
Print_ISBN :
0-7803-7948-9
DOI :
10.1109/CAOL.2003.1250566
