DocumentCode :
399814
Title :
Modeling the suspended gate MOSFET used as voltage programmable switch
Author :
Dobrescu, D. ; Dobrescu, L. ; Rusu, A. ; Ionescu, A.M.
Author_Institution :
Politehnic Inst. of Bucharest, Romania
Volume :
1
fYear :
2003
fDate :
28 Sept.-2 Oct. 2003
Abstract :
This paper is a new approach to investigate and model the behaviour of the SGMOSFET with an external force applied on the mobile gate. Mechanical influences on the device threshold voltage VT are presented together with the advantages and the limitations of this operating regime of the SGMOSFET.
Keywords :
MOSFET; semiconductor device models; SGMOSFET; suspended gate MOSFET; threshold voltage; voltage programmable switch; Capacitance; Capacitors; Electronic mail; Force control; MOSFET circuits; Mathematical model; Pressure control; Springs; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
Type :
conf
DOI :
10.1109/SMICND.2003.1251379
Filename :
1251379
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=399814
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