DocumentCode
399846
Title
Intrinsic temperature sensitivities of 1.3 μm GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers
Author
Sweeney, Stephen J. ; Fehse, Robin ; Adams, Alfred R. ; Riechert, H.
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
Volume
1
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
39
Abstract
The apparent temperature stability of GaInNAs-based lasers is attributed to significant defect current. By removing this current, GaInNAs devices have a similar temperature dependence to InGaAsP devices whilst AlGaInAs devices are more thermally stable.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; semiconductor lasers; thermal stability; thermoelectricity; 1.3 micron; AlGaInAs devices; AlGaInAs-InP; GaInNAs-GaAs; GaInNAs-based lasers; InGaAsP devices; InGaAsP-InP; defect current; semiconductor lasers; temperature stability; thermal stability; Gallium arsenide; Indium phosphide; Optical materials; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1251589
Filename
1251589
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