Title :
1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate
Author :
Jin, X. ; Yu, S.-Q. ; Cao, Y. ; Ding, D. ; Wang, J.-B. ; Samal, N. ; Sadofyev, Y. ; Johnson, S.R. ; Zhang, Y.-H.
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Abstract :
Bottom emitting 1.3 μm GaAsSb resonant-cavity light-emitting diodes (RCLEDs) on GaAs that exhibit superior performance in spectral linewidth, beam shape and characteristic temperature are demonstrated. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDs for optical data-communication modules.
Keywords :
III-V semiconductors; cavity resonators; gallium arsenide; integrated optoelectronics; light emitting diodes; semiconductor growth; spectral line breadth; 1.3 mum; GaAs; GaAsSb-GaAs; beam shape; optical data-communication modules; resonant-cavity light-emitting diodes; spectral linewidth; Costs; Distributed Bragg reflectors; Gallium arsenide; Indium phosphide; Light emitting diodes; Optical coupling; Optical fibers; Resonance; Solids; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251604
