Title :
Gain and carrier distribution in InGaAs quantum dot lasers
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., UK
Abstract :
I evaluate the factors that cause gain saturation-number of dot states, proximity of wetting layer and a non-thermal carrier distribution-using measurements of gain and carrier distribution in InGaAs quantum dot laser structures.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; indium compounds; quantum dot lasers; semiconductor quantum dots; InGaAs; carrier distribution; dot states; gain distribution; gain saturation-number; quantum dot lasers; wetting layer proximity; Astronomy; Extraterrestrial measurements; Gain measurement; Indium gallium arsenide; Physics; Quantum dot lasers; Quantum well lasers; Temperature dependence; Threshold current; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251627
