Title :
1.3 μm ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties
Author :
Mao, M.-H. ; Wu, T.-Y. ; Chang, F.-Y. ; Lin, H.-H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
In(Ga)As/GaAs quantum-dot lasers with emission wavelength at 1295 nm at room temperature are fabricated. The highest relaxation oscillation frequency measured at room temperature is 1.8 GHz, corresponding to a modulation bandwidth of 2.8 GHz.
Keywords :
III-V semiconductors; carrier relaxation time; electro-optical modulation; gallium arsenide; indium compounds; optical fabrication; quantum dot lasers; 1.3 mum; 1.8 GHz; 1295 nm; 20 degC; InGaAs-GaAs; dynamic properties; modulation bandwidth; quantum-dot lasers; relaxation oscillation frequency; room temperature; Fiber lasers; Frequency; Gallium arsenide; Laser modes; Optical pulses; Pulse measurements; Quantum dot lasers; Space vector pulse width modulation; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251629
