• DocumentCode
    399879
  • Title

    A comparison of the overall radiative efficiency of DWELL, standard QD and QW laser structures

  • Author

    Pearce, E.J. ; Smowton, P.M. ; Summers, Huw D. ; Hopkinson, Mark

  • Author_Institution
    Dept. of Phys. & Astron., Cardiff Univ., UK
  • Volume
    1
  • fYear
    2003
  • fDate
    27-28 Oct. 2003
  • Firstpage
    120
  • Abstract
    Carrier distributions in DWELL (quantum dot within a quantum well) and standard quantum dot (QD) lasers are similar but radiative efficiency is higher in DWELLs although both are lower than a quantum well (QW) device even though the QD lasers have lower threshold current densities.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; indium compounds; quantum dot lasers; quantum well lasers; DWELL; InGaAs-GaAs-Al0.15Ga0.85As; QD laser structures; QW laser structures; carrier distributions; quantum dot lasers; quantum well device; radiative efficiency; threshold current densities; Current density; Gain measurement; Gallium arsenide; Optical design; Quantum dot lasers; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature distribution; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-7888-1
  • Type

    conf

  • DOI
    10.1109/LEOS.2003.1251630
  • Filename
    1251630
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=399879