Title :
Room temperature lasing with low threshold current of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Author :
Tatebayashi, J. ; Hatori, N. ; Ebe, H. ; Sudou, H. ; Kuramata, A. ; Sugawara, M. ; Arakawa, Y.
Author_Institution :
RCAST, Tokyo, Japan
Abstract :
This study demonstrates lasing action with very low threshold current (6.7 mA) of InAs/GaAs quantum dots at the wavelength of 1.18 μm grown by metalorganic chemical vapor deposition (MOCVD).
Keywords :
III-V semiconductors; MOCVD; indium compounds; quantum dot lasers; semiconductor growth; semiconductor quantum dots; 1.18 mum; 20 degC; 6.7 mA; GaAs; InAs-GaAs; low threshold current; metalorganic chemical vapor deposition; quantum dots; room temperature lasing; Chemical lasers; Chemical vapor deposition; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Quantum dots; Temperature; Threshold current; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251631
