Title :
Temperature characteristics of long-wavelength quantum dash lasers on [110] and [111]A InP
Author :
Zuo, Zongyu ; Wang, R.H. ; Newell, T.C. ; Gray, A.L. ; Varangis, P.M. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
This study reports on the fabrication and lasing characteristics of InAs quantum dot (QD) lasers on GaAs substrates grown by metalorganic chemical vapor deposition (MOCVD). Continuous wave lasing at room temperature with low threshold (6.7 mA) has been achieved at the wavelength of 1.18 μm. The threshold current of 6.7 mA is the lowest value so far achieved in QD lasers grown by MOCVD. The observed lasing wavelength is also the longest. Comparison with photoluminescence spectra of InAs QD lasers indicate that the observed lasing originates mainly from the ground state of InAs QDs.
Keywords :
III-V semiconductors; MOCVD; ground states; indium compounds; optical fabrication; quantum dot lasers; semiconductor growth; semiconductor quantum dots; thermo-optical effects; 1.18 mum; 20 degC; 6.7 mA; GaAs; InAs-GaAs; fabrication; ground state; lasing characteristics; long-wavelength quantum dash lasers; metalorganic chemical vapor deposition; photoluminescence; quantum dot lasers; room temperature; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Indium phosphide; MOCVD; Optical device fabrication; Quantum dot lasers; Quantum dots; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251632
