DocumentCode :
399915
Title :
Modulation characteristics of In0.4Ga0.6As/GaAs quantum dot gain-coupled distributed feedback lasers
Author :
Fathpour, Sasan ; Bhattacharya, Pallab ; Pradhan, S. ; Ghosh, S. ; Topolancik, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
1
fYear :
2003
fDate :
27-28 Oct. 2003
Firstpage :
202
Abstract :
This paper presents the high-speed modulation characteristics of In0.4Ga0.60As/GaAs self-organized quantum dot gain-coupled DFB lasers. The maximum measured 3 dB bandwidth, at 300 K, is 5 GHz and high frequency chirp in the devices is undetectable.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; optical modulation; quantum dot lasers; 300 K; 5 GHz; In0.4Ga0.60As-GaAs; frequency chirp; modulation characteristics; quantum dot gain-coupled distributed feedback lasers; self-organized quantum dot gain-coupled DFB lasers; Bandwidth; Distributed feedback devices; Gallium arsenide; Laser feedback; Pulse measurements; Quantum dot lasers; Quantum dots; Threshold current; US Department of Transportation; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7888-1
Type :
conf
DOI :
10.1109/LEOS.2003.1251705
Filename :
1251705
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=399915
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