A novel distributed reflector laser consisting of width modulated wires in active DFB and passive DBR sections

Author

Ohira, Kazuya ; Murayama, Tomonori ; Yagi, Hideki ; Tamura, Shinji ; Arai, Shigehisa

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

Volume

1

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

204

Abstract

A low threshold current operation of a novel distributed reflector (DR) laser, consisting of width modulated active regions for active DFB and passive wire DBR sections, was realized. A threshold current of 3.2 mA, an output ratio from the front to the rear facets of 11, and sub-mode suppression ratio (SMSR) of 46.6 dB were obtained under RT-CW condition for the device with the stripe width of 4.3 μm and the active region length of 260 μm.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; distributed feedback lasers; gallium compounds; indium compounds; quantum well lasers; 260 mum; 3.2 mA; 4.3 mum; GaInAsP-InP; active DFB sections; distributed reflector laser; low threshold current operation; passive DBR sections; sub-mode suppression ratio; width modulated active regions; width modulated wires; Distributed Bragg reflectors; Optical interconnections; Potential well; Reflectivity; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1251706

Filename

1251706