Title :
Trends in design of cw room temperature operated GaSb based lasers with λ ≥ 2.5 μm
Author :
Shterengas, L. ; Kim, J.G. ; Belenky, G. ; Martinelli, R.U.
Author_Institution :
State Univ. of New York, Stony Brook, NY, USA
Abstract :
Characteristics of GaSb-based lasers operated at 2.5, 2.7 and 2.8 μm with cw output power of 1 W, 500 mW and 160 mW are presented. Trends of the design improvement are discussed.
Keywords :
III-V semiconductors; gallium compounds; optical design techniques; semiconductor device testing; semiconductor lasers; 1 W; 160 mW; 2.5 mum; 2.7 mum; 2.8 mum; 500 mW; GaSb; GaSb based lasers; cw room temperature lasers; laser design; Gas lasers; Laser excitation; Laser modes; Optical design; Optical materials; Power lasers; Pump lasers; Quantum cascade lasers; Radiative recombination; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251743
