Title :
GaInAsSb-AlGaAsSb distributed-feedback lasers emitting in the 2.4 μm range
Author :
Hümmer, M. ; Rossner, K. ; Benkert, A. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
Abstract :
This study extends the lateral metal grating technology to the fabrication of GaInAsSb/AlGaAsSb single mode DFB lasers in the 2.4 μ range. Laser characterization and measurements have been performed at 20°C and 40°C in order to show the constant temperature sensitivity over the whole grating range. The wide gain spectrum of the GaSb structures permits the realization of DFB lasers from 2.339 up to 2.392 μm by variation of the grating periods from 326.88 nm to 334.88 nm.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; infrared spectra; optical fabrication; semiconductor device measurement; semiconductor device testing; semiconductor lasers; 2.339 to 2.392 mum; 20 degC; 40 degC; GaInAsSb-AlGaAsSb; distributed-feedback lasers; gain spectrum; laser characterization; laser measurements; lateral metal grating technology; single mode DFB lasers; temperature sensitivity; Distributed feedback devices; Etching; Gas lasers; Gratings; Laser feedback; Laser modes; Laser tuning; Optical device fabrication; Temperature sensors; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251744
