Title :
Gain and internal losses in GaSb-based 2 μm quantum-well diode-lasers
Author :
Rattunde, M. ; Schmitz, J. ; Kiefer, R. ; Wagner, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiberg, Germany
Abstract :
This study identifies the gain and dominant loss mechanisms in GaSb-based quantum-well diode lasers. Experimental results are presented and analyzed for a series of GaSb-based diode lasers all emitting at 2.0 μm at 300 K.
Keywords :
III-V semiconductors; gallium compounds; optical losses; quantum well lasers; 2 mum; 300 K; GaSb; GaSb-based diode lasers; internal losses; optical gain; quantum-well diode-lasers; Absorption; Current density; Diode lasers; Gas lasers; Laser stability; Optical materials; Optical resonators; Power generation; Power lasers; Quantum wells;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251745
