Mid-infrared whispering gallery lasers

Author

Wright, D.A. ; Krier, A. ; Sherstnev, V.V. ; Monakhov, A.

Author_Institution

Lancaster Univ., UK

Volume

1

fYear

2003

fDate

27-28 Oct. 2003

Abstract

This paper reports the first mid-infrared ring laser diode based on InAs and grown by liquid phase epitaxy (LPE). Coherent emission for a 200 μm ring resonator was obtained near 3.0 μm at 80 K. The individual modes exhibit hardly any wavelength shift with increasing injection current. The absence of a significant modal wavelength shift confirms that the emission originates from in-plane propagation around the inside perimeter of the mesa due to a whispering gallery mode which is facilitated by total internal reflection with high Q.

Keywords

III-V semiconductors; Q-factor; indium compounds; infrared spectra; laser cavity resonators; laser modes; liquid phase epitaxial growth; ring lasers; semiconductor growth; semiconductor lasers; 200 mum; 80 K; InAs; coherent emission; laser modes; liquid phase epitaxy; midinfrared lasers; ring laser diode; ring resonator; total internal reflection; whispering gallery lasers; Geometrical optics; Gratings; Laser feedback; Laser modes; Optical ring resonators; Optical waveguides; Ring lasers; Semiconductor lasers; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1251746

Filename

1251746