Title :
Mid-infrared whispering gallery lasers
Author :
Wright, D.A. ; Krier, A. ; Sherstnev, V.V. ; Monakhov, A.
Author_Institution :
Lancaster Univ., UK
Abstract :
This paper reports the first mid-infrared ring laser diode based on InAs and grown by liquid phase epitaxy (LPE). Coherent emission for a 200 μm ring resonator was obtained near 3.0 μm at 80 K. The individual modes exhibit hardly any wavelength shift with increasing injection current. The absence of a significant modal wavelength shift confirms that the emission originates from in-plane propagation around the inside perimeter of the mesa due to a whispering gallery mode which is facilitated by total internal reflection with high Q.
Keywords :
III-V semiconductors; Q-factor; indium compounds; infrared spectra; laser cavity resonators; laser modes; liquid phase epitaxial growth; ring lasers; semiconductor growth; semiconductor lasers; 200 mum; 80 K; InAs; coherent emission; laser modes; liquid phase epitaxy; midinfrared lasers; ring laser diode; ring resonator; total internal reflection; whispering gallery lasers; Geometrical optics; Gratings; Laser feedback; Laser modes; Optical ring resonators; Optical waveguides; Ring lasers; Semiconductor lasers; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251746
