Photonic AND/NAND logic gates using semiconductor microresonators

Author

Ibrahim, Tarek A. ; Grover, R. ; Kuo, L.-C. ; Kanakaraju, S. ; Calhoun, L.C. ; Ho, P.-T.

Author_Institution

Lab. of Phys. Sci., College Park, MD, USA

Volume

1

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

283

Abstract

This study demonstrates and characterizes the performance of all-optical AND and NAND logic gates using InP and GaAs micro-racetrack resonators. Since the switching energy of the device scales down by field enhancement (FE), subpico joule switching energy is predicted, which is required to operate the logic gate at 100 GHz assuming a carrier lifetime of 10 ps and that the microresonator has a moderate FE of 4.

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; integrated optics; micro-optics; micromechanical resonators; optical logic; optical resonators; optical switches; semiconductor device testing; 10 ps; 100 GHz; AND/NAND logic gates; GaAs; InP; carrier lifetime; field enhancement; microracetrack resonators; photonic logic gates; semiconductor microresonators; subpicojoule switching energy; Logic devices; Logic gates; Microcavities; Optical coupling; Optical pumping; Optical resonators; Optical ring resonators; Optical waveguides; Probes; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1251748

Filename

1251748