Title :
Photonic AND/NAND logic gates using semiconductor microresonators
Author :
Ibrahim, Tarek A. ; Grover, R. ; Kuo, L.-C. ; Kanakaraju, S. ; Calhoun, L.C. ; Ho, P.-T.
Author_Institution :
Lab. of Phys. Sci., College Park, MD, USA
Abstract :
This study demonstrates and characterizes the performance of all-optical AND and NAND logic gates using InP and GaAs micro-racetrack resonators. Since the switching energy of the device scales down by field enhancement (FE), subpico joule switching energy is predicted, which is required to operate the logic gate at 100 GHz assuming a carrier lifetime of 10 ps and that the microresonator has a moderate FE of 4.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; integrated optics; micro-optics; micromechanical resonators; optical logic; optical resonators; optical switches; semiconductor device testing; 10 ps; 100 GHz; AND/NAND logic gates; GaAs; InP; carrier lifetime; field enhancement; microracetrack resonators; photonic logic gates; semiconductor microresonators; subpicojoule switching energy; Logic devices; Logic gates; Microcavities; Optical coupling; Optical pumping; Optical resonators; Optical ring resonators; Optical waveguides; Probes; Resonance;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251748
