Title :
1.3-μm InGaAlAs MQW RWG DFB lasers for uncooled 10-Gb/s datacom applications
Author :
Nakahara, K. ; Tsuchiya, T. ; Kitatani, T. ; Shinoda, K. ; Taniguchi, Takafumi ; Kikawa, T. ; Fujisaka, S. ; Nomoto, E. ; Hamano, F. ; Sawada, M. ; Yuasa, Takeshi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
It was experimentally demonstrated that a 1.3 μm InGaAlAs MQW DFB RWG laser with low-resistance notch-free grating was directly modulated at 12.5 Gb/s and 10 Gb/s running at 115°C.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; optical modulation; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 mum; 115 degC; 12.5 Gbit/s; InGaAlAs; MQW RWG DFB lasers; low-resistance notch-free grating; optical modulation; uncooled 10-Gb/s datacom applications; Bit error rate; Extinction ratio; Fiber lasers; Gratings; Laser beam cutting; Optical fibers; Optical filters; Optical saturation; Power lasers; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251788
