DocumentCode :
40
Title :
Lifetime Distribution Analysis of Stress-Induced Voiding Based on Void Nucleation and Growth in Cu/Low- \\kappa Interconnects
Author :
Yokogawa, Shinji ; Tsuchiya, Hideaki
Author_Institution :
Device & Anal. Dev. Div., Renesas Electron. Corp., Sagamihara, Japan
Volume :
13
Issue :
1
fYear :
2013
fDate :
Mar-13
Firstpage :
272
Lastpage :
276
Abstract :
The lifetime distribution of stress-induced voiding with area scaling is investigated on a void nucleation and growth framework. The distribution resulting from the convolution integrals of the time to void nucleation and the time for void growth was applied to observed data. The time to void nucleation showed non-Poisson area scaling, whereas the time for void growth showed Poisson area scaling. Therefore, the area scaling effects were applied to a negative binominal distribution and a Poisson distribution, respectively. With a Monte Carlo simulation, it was found that the time for void growth will be dominant for the product-level lifetime.
Keywords :
Monte Carlo methods; Poisson distribution; integrated circuit interconnections; integrated circuit reliability; nucleation; Cu/low-κ interconnects; Monte Carlo simulation; Poisson distribution; lifetime distribution analysis; negative binominal distribution; non-Poisson area scaling; product-level lifetime; stress-induced voiding; void nucleation; Dielectrics; Grain boundaries; Metals; Monte Carlo methods; Reliability; Shape; Weibull distribution; Area scaling; Cu/low-$kappa$ ; Poisson distribution; Weibull distribution; negative binominal distribution; stress-induced voiding (SIV);
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2013.2237775
Filename :
6403534
Link To Document :
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