Title :
975-nm high brightness slab-coupled semiconductor lasers and arrays
Author :
Huang, Robin K. ; Missaggia, Leo J. ; Donnelly, Joseph P. ; Harris, Christopher T. ; Plant, Jason ; Mull, Daniel E. ; Goodhue, William T. ; Turner, George W.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
This paper reports on recent progress in AlGaAs/InGaAs slab-coupled optical waveguide laser (SCOWL) devices. 975-nm and 915-nm SCOWL devices have been operated in single fundamental mode output to > 1-W output power. Further increases in single-mode power at 975 nm have been achieved by scaling the waveguide thickness. Array of SCOWL devices with up to 10 elements have also been constructed. The power scales essentially with the number of elements, and 9.8 W of total cw power has been obtained from a 10-element array.
Keywords :
III-V semiconductors; aluminium compounds; brightness; gallium arsenide; laser modes; optical couplers; semiconductor laser arrays; waveguide lasers; 9.8 W; 915 nm; 975 nm; AlGaAs-InGaAs; high brightness semiconductor lasers; semiconductor laser arrays; single-mode laser; slab-coupled optical waveguide laser; slab-coupled semiconductor lasers; Brightness; Indium gallium arsenide; Laser modes; Optical arrays; Optical devices; Optical waveguides; Power lasers; Semiconductor laser arrays; Semiconductor waveguides; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251887
