New power semiconductor components for AC/DC power supply applications

A new voltage class based on the compensation principle is introduced. Using this principle the technological parameter set for the optimization of key parameters like RDSon, BVDSS, gatecharge etc. was modified as shown. The new CoolMOS/spl trade/ 500 V offers a well balanced set of electrical features including a superior RDSon and dynamic behaviour compared to conventional and follower devices. For a 600 V device the active chip size shrinks by factor of 4 in comparison to a conventional MOSFET. An 800 V device reaches approximately a factor 6. The main limitation and thus the greatest challenge for the fabrication process is the precise control of the charge compensation. The CoolMOS offers superior performance in flyback topologies. The CoolMOS/spl trade/ 500 V is specially designed for PFC, resonant bridge topologies, soft switching and dual forward converters. Silicon carbide (SiC) Schottky diodes offer unique ultra-fast switching behaviour making them extremely attractive for applications requiring blocking voltages ranging from 300 V to 1000 V and switching frequencies higher than 50 kHz. When switching a Schottky diode off, there is no need to remove excess carriers from the n-region as for pn diodes. Hence, no reverse recovery current will show up. Instead, only a displacement current for charging the metal-semiconductor-junction capacitance of the diode can be observed. A Si pin double diode (2*300 V serial in one package) gives better reverse current than ultra-fast Si pin benchmark diode, but has much higher forward voltage drop.