Title :
A novel trench gate LDMOS
Author_Institution :
Fairchild Semicond., Discrete Power Technol. Group, San Jose, CA, USA
fDate :
28 Sept.-2 Oct. 2003
Abstract :
In this paper a novel trench gate lateral double diffused MOSFET (TG-LDMOS) device will be discussed and compared to the conventional LDMOS structure. Currently, the LDMOS devices are the preferred technology for base station amplifiers and in Power MOSFET switching applications. The Synopsys TCAD simulation results will shows an improvement in the breakdown capability, capacitance and gate charge reduction, and improved transfer curve characteristics as compared with a conventional LDMOS structure.
Keywords :
power MOSFET; semiconductor device breakdown; semiconductor device testing; technology CAD (electronics); Synopsys TCAD simulation; base station amplifiers; breakdown capability; capacitance; gate charge reduction; improved transfer curve characteristics; power MOSFET switching applications; trench gate LDMOS; trench gate lateral double diffused MOSFET; Base stations; Breakdown voltage; Electric breakdown; MOSFET circuits; Medical simulation; Parasitic capacitance; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1252434
