Crystallographic anisotropy in InAs quantum dashes on GaAs

Author

Huffaker, D.L. ; Balakrishnan, Ganesh ; Huang, Shenghong ; Dawson, L.R. ; Hains, C.P.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

698

Abstract

In this presentation, we will discuss data resulting from high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and photoluminescence studies comparing QDs to Qdashes. Both structures are grown on GaAs substrates using InAs coverage on a thin In_xGa_1-xAs layer. Both structures include an AlGaAsSb metamorphic buffer to grade the lattice constant from the GaAs substrate to the InGaAs matrix. HRTEM images of a Qdash cleaved along the [110] and [1-10] crystal plane, respectively. The lattice constant is determined from the images and compared.

Keywords

III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; gallium compounds; indium compounds; lattice constants; photoluminescence; semiconductor quantum dots; transmission electron microscopy; AFM; AlGaAsSb; AlGaAsSb metamorphic buffer; GaAs; GaAs substrate; InAs; InAs quantum dashes; InGaAs; TEM; atomic force microscopy; crystallographic anisotropy; high-resolution transmission electron microscopy; lattice constant; photoluminescence; Anisotropic magnetoresistance; Atomic force microscopy; Atomic layer deposition; Crystallography; Gallium arsenide; Indium gallium arsenide; Lattices; Photoluminescence; Quantum dots; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1252992

Filename

1252992