Title :
Crystallographic anisotropy in InAs quantum dashes on GaAs
Author :
Huffaker, D.L. ; Balakrishnan, Ganesh ; Huang, Shenghong ; Dawson, L.R. ; Hains, C.P.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
In this presentation, we will discuss data resulting from high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and photoluminescence studies comparing QDs to Qdashes. Both structures are grown on GaAs substrates using InAs coverage on a thin InxGa1-xAs layer. Both structures include an AlGaAsSb metamorphic buffer to grade the lattice constant from the GaAs substrate to the InGaAs matrix. HRTEM images of a Qdash cleaved along the [110] and [1-10] crystal plane, respectively. The lattice constant is determined from the images and compared.
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; gallium compounds; indium compounds; lattice constants; photoluminescence; semiconductor quantum dots; transmission electron microscopy; AFM; AlGaAsSb; AlGaAsSb metamorphic buffer; GaAs; GaAs substrate; InAs; InAs quantum dashes; InGaAs; TEM; atomic force microscopy; crystallographic anisotropy; high-resolution transmission electron microscopy; lattice constant; photoluminescence; Anisotropic magnetoresistance; Atomic force microscopy; Atomic layer deposition; Crystallography; Gallium arsenide; Indium gallium arsenide; Lattices; Photoluminescence; Quantum dots; Transmission electron microscopy;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1252992