• DocumentCode
    400375
  • Title

    Theoretical study of breakdown probabilities in single photon avalanche diodes

  • Author

    Ng, J.S. ; Tan, C.H. ; David, J.P.R. ; Rees, G.J.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
  • Volume
    2
  • fYear
    2003
  • fDate
    27-28 Oct. 2003
  • Firstpage
    773
  • Abstract
    In this paper we have used a simple, hard dead space impact ionization model to describe the breakdown probabilities in single photon avalanche diodes.
  • Keywords
    avalanche breakdown; avalanche photodiodes; impact ionisation; photodetectors; semiconductor device breakdown; breakdown probabilities; hard dead space impact ionization model; single photon avalanche diodes; Avalanche breakdown; Avalanche photodiodes; Breakdown voltage; Charge carrier processes; Electric breakdown; Electrons; Impact ionization; Optical detectors; Optical noise; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-7888-1
  • Type

    conf

  • DOI
    10.1109/LEOS.2003.1253028
  • Filename
    1253028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=400375