Title :
Wide operating temperature range of passively mode locked InGaAs/InGaAsP 1.55 μm quantum well lasers
Author :
Tan, W.K. ; Wong, H.Y. ; Lee, H.K. ; Bryce, A.C. ; Marsh, J.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Glasgow Univ., UK
Abstract :
We report an investigation of the mode locked operation of mode locked laser diodes above room temperature. Stable mode locking without any trace of self-pulsation is observed at temperatures up to 65°C.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser mode locking; quantum well lasers; radiofrequency spectra; 1.55 micron; 293 to 298 K; 65 C; InGaAs-InGaAsP; InGaAs-InGaAsP quantum well lasers; mode locked laser diodes; passive mode locking; self-pulsation; Diode lasers; Indium gallium arsenide; Laser mode locking; Optical materials; Optical pulses; Quantum well lasers; Radio frequency; Space vector pulse width modulation; Temperature distribution; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253054
